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In JoVE (1)

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Articles by Morewell Gasseller in JoVE

 JoVE Applied Physics

المسح مسبار واحدة الإلكترون الطيفي السعة

1Department of Physics and Astronomy, Michigan State University, 2Department of Chemistry & Biochemistry/Physics, Mercyhurst University, 3Department of Physics, Saint Louis University, 4Department of Physics, Massachusetts Institute of Technology


JoVE 50676

المسح مسبار-إلكترون واحد الطيفي السعة يسهل دراسة حركة الإلكترون واحد في مناطق تحت سطح الأرض المترجمة. أدرج حساسة تهمة الكشف عن الدوائر المبردة في المسح المجهر التحقيق للتحقيق في نظم صغيرة من الذرات إشابة تحت سطح عينات أشباه الموصلات.

Other articles by Morewell Gasseller on PubMed

Single-electron Capacitance Spectroscopy of Individual Dopants in Silicon

Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of a silicon sample. Using a capacitance-based approach, we have both spatially resolved individual subsurface boron acceptors and detected spectroscopically single holes entering and leaving these minute systems of atoms. A resonance identified as the B+ state is shown to shift in energy from acceptor to acceptor. We examine this behavior with respect to nearest-neighbor distances. By directly measuring the quantum levels and testing the effect of dopant-dopant interactions, this method represents a valuable tool for the development of future atomic-scale semiconductor devices.

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