Articles by David L. Jaeger in JoVE
Atomically Traceable Nanostructure Fabrication Josh B. Ballard1, Don D. Dick2, Stephen J. McDonnell3, Maia Bischof4, Joseph Fu5, James H. G. Owen1, William R. Owen1, Justin D. Alexander1, David L. Jaeger4, Pradeep Namboodiri5, Ehud Fuchs1, Yves J. Chabal3, Robert M. Wallace3, Richard Reidy4, Richard M. Silver5, John N. Randall1, James Von Ehr1 1Zyvex Labs, 2Department of Physics, University of Texas at Dallas, 3Department of Materials Science and Engineering, University of Texas at Dallas, 4Materials Science and Engineering, University of North Texas, 5National Institute of Standards and Technology We report a protocol for combining the atomic metrology of the Scanning Tunneling Microscope for surface patterning with selective Atomic Layer Deposition and Reactive Ion Etching. Using a robust process involving numerous atmospheric exposures and transport, 3D nanostructures with atomic metrology are fabricated.
Other articles by David L. Jaeger on PubMed
Exploring the Limits of N-type Ultra-shallow Junction Formation ACS Nano. Jun, 2013 | Pubmed ID: 23721101 Low resistivity, near-surface doping in silicon represents a formidable challenge for both the microelectronics industry and future quantum electronic devices. Here we employ an ultra-high vacuum strategy to create highly abrupt doping profiles in silicon, which we characterize in situ using a four point probe scanning tunnelling microscope. Using a small molecule gaseous dopant source (PH3) which densely packs on a reconstructed silicon surface, followed by encapsulation in epitaxial silicon, we form highly conductive dopant sheets with subnanometer control of the depth profiles. This approach allows us to test the limits of ultra-shallow junction formation, with room temperature resistivities of 780 Ω/□ at an encapsulation depth of 4.3 nm, increasing to 23 kΩ/□ at an encapsulation depth of only 0.5 nm. We show that this depth-dependent resistivity can be accounted for by a combination of dopant segregation and surface scattering.