Articles by Husong Zheng in JoVE
Preparation and Characterization of C60/Graphene Hybrid Nanostructures Chuanhui Chen1, Adam Mills1,2, Husong Zheng1, Yanlong Li1, Chenggang Tao1 1Department of Physics, Center for Soft Matter and Biological Physics, Virginia Tech, 2Department of Physics, Princeton University Here we present a protocol for the fabrication of C60/graphene hybrid nanostructures by physical thermal evaporation. Particularly, the proper manipulation of deposition and annealing conditions allow the control over the creation of 1D and quasi 1D C60 structures on rippled graphene.
Other articles by Husong Zheng on PubMed
Temperature Evolution of Quasi-one-dimensional C60 Nanostructures on Rippled Graphene Scientific Reports. Sep, 2015 | Pubmed ID: 26391054 We report the preparation of novel quasi-one-dimensional (quasi-1D) C60 nanostructures on rippled graphene. Through careful control of the subtle balance between the linear periodic potential of rippled graphene and the C60 surface mobility, we demonstrate that C60 molecules can be arranged into a quasi-1D C60 chain structure with widths of two to three molecules. At a higher annealing temperature, the quasi-1D chain structure transitions to a more compact hexagonal close packed quasi-1D stripe structure. This first experimental realization of quasi-1D C60 structures on graphene may pave a way for fabricating new C60/graphene hybrid structures for future applications in electronics, spintronics and quantum information.
Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe Nano Letters. Mar, 2018 | Pubmed ID: 29461061 To ensure practical applications of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands on TiSe surfaces as a model system, we have observed nonlinear area evolution and growth from triangular to hexagonal driven by scanning tunneling microscopy (STM) subjected electrical stressing. The observed growth dynamics represent a 2D departure from the linear area growth law expected for bulk vacancy clustering. Our simulations of monolayer island evolution using phase-field modeling and first-principles calculations are in good agreement with our experimental observations, and point toward preferential edge atom dissociation under STM scanning driving the observed nonlinear area growth. We further quantified a parabolic growth rate dependence with respect to the tunneling current magnitude. The results could be potentially important for device reliability in systems containing ultrathin transition metal dichalcogenides and related 2D materials subject to electrical stressing.