In JoVE (1)
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Articles by Markus Nacke in JoVE
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope Ellen Hieckmann1, Markus Nacke1, Matthias Allardt1, Yury Bodrov1, Paul Chekhonin2, Werner Skrotzki2, Jörg Weber1 1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.