Other Publications (1)
Articles by Morewell Gasseller in JoVE
Scanning-probe Single-electron Capacitance Spectroscopy Kathleen A. Walsh1, Megan E. Romanowich1, Morewell Gasseller1,2, Irma Kuljanishvili1,3, Raymond Ashoori4, Stuart Tessmer1 1Department of Physics and Astronomy, Michigan State University, 2Department of Chemistry & Biochemistry/Physics, Mercyhurst University, 3Department of Physics, Saint Louis University, 4Department of Physics, Massachusetts Institute of Technology Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.
Other articles by Morewell Gasseller on PubMed
Single-electron Capacitance Spectroscopy of Individual Dopants in Silicon Nano Letters. Dec, 2011 | Pubmed ID: 22022859 Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of a silicon sample. Using a capacitance-based approach, we have both spatially resolved individual subsurface boron acceptors and detected spectroscopically single holes entering and leaving these minute systems of atoms. A resonance identified as the B+ state is shown to shift in energy from acceptor to acceptor. We examine this behavior with respect to nearest-neighbor distances. By directly measuring the quantum levels and testing the effect of dopant-dopant interactions, this method represents a valuable tool for the development of future atomic-scale semiconductor devices.