Articles by Parisa Pourhossein in JoVE
Fabricating Nanogaps by Nanoskiving Parisa Pourhossein1, Ryan C. Chiechi1 1Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen The fabrication of electrically addressable, high-aspect-ratio (> 1000:1) metal nanowires separated by gaps of single nanometers using either sacrificial layers of aluminum and silver or self-assembled monolayers as templates is described. These nanogap structures are fabricated without a clean room or any photo- or electron-beam lithographic processes by a form of edge lithography known as nanoskiving.
Other articles by Parisa Pourhossein on PubMed
Directly Addressable Sub-3 Nm Gold Nanogaps Fabricated by Nanoskiving Using Self-assembled Monolayers As Templates ACS Nano. Jun, 2012 | Pubmed ID: 22577867 This paper describes the fabrication of electrically addressable, high-aspect-ratio (>10000:1) nanowires of gold with square cross sections of 100 nm on each side that are separated by gaps of 1.7-2.2 nm which were defined using self-assembled monolayers (SAMs) as templates. We fabricated these nanowires and nanogaps without a clean room or any photo- or electron-beam lithographic processes by mechanically sectioning sandwich structures of gold separated by a SAM using an ultramicrotome. This process is a form of edge lithography known as Nanoskiving. These wires can be manually positioned by transporting them on drops of water and are directly electrically addressable; no further lithography is required to connect them to an electrometer. Once a block has been prepared for Nanoskiving (which takes less than one day), hundreds of thousands of nanogaps can be generated, on demand, at a rate of about one nanogap per second. After ashing the organic components with oxygen plasma, we measured the width of a free-standing gap formed from a SAM of 16-mercaptodohexanoic acid (2.4 nm in length) of 2.6 Â± 0.5 nm by transmission electron microscopy. By fitting current-voltage plots of unashed gaps containing three alkanedithiolates of differing lengths to Simmonsâ€™ approximation, we derived a value of Î² = 0.75 Ã…(-1) (0.94 n(C)(-1)) at 500 mV. This value is in excellent agreement with literature values determined by a variety of methods, demonstrating that the gap-size can be controlled at resolutions as low as 2.5 Ã… (i.e., two carbon atoms).