JoVE Journal
Engineering
Engineering
Ein Abonnement für JoVE ist erforderlich, um diesen Inhalt ansehen zu können.
Kapitel
Summary
The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.