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JoVE Journal Engineering
Análise de Contato Interfaces para únicos dispositivos de nanofios de GaN
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Análise de Contato Interfaces para únicos dispositivos de nanofios de GaN

Article DOI: 10.3791/50738-v • 11:13 min • November 15th, 2013
November 15th, 2013 •
1, 1, 1
1Quantum Electronics and Photonics Division, National Institute of Standards and Technology

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A técnica foi desenvolvida, que remove Ni / Au filmes contato de metal do seu substrato para permitir a análise e caracterização do contato / substrato e interfaces de contato / NW de dispositivos de GaN nanofios individuais.

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Física Edição 81 nanodispositivos (eletrônico) materiais semicondutores de dispositivos semicondutores GaN nanofios contatos morfologia
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