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Modelli atomicamente definiti per epitassiale crescita di ossido Complex Thin Films
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Modelli atomicamente definiti per epitassiale crescita di ossido Complex Thin Films

Article DOI: 10.3791/52209-v • 08:49 min • December 4th, 2014
December 4th, 2014 •
1, 1, 1, 1, 1, 1
1MESA+ Institute for Nanotechnology, University of Twente

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Varie procedure sono descritte per preparare modelli atomicamente definiti per la crescita epitassiale di film sottili di ossidi complessi. Trattamenti chimici unici SrTiO cristallina 3 (001) e DyScO 3 (110) substrati sono stati eseguiti per ottenere atomicamente lisce superfici singole terminati. Ca 2 Nb 3 O 10 - nanosheets sono stati usati per creare modelli atomicamente definiti su substrati arbitrari.

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Chimica Substrati ossidi perovskiti epitassia film sottili singola terminazione trattamento di superficie nanosheets Langmuir-Blodgett
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