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오믹 접촉 제조 집중 이온 빔 기술 및 전기 특성 계층 반도체 나노 구조를 위해 사용

Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating

Journal (Engineering)

Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating

Microfluidic Imaging Flow Cytometry by Asymmetric-detection Time-stretch Optical Microscopy (ATOM)

Journal (Engineering)

Microfluidic Imaging Flow Cytometry by Asymmetric-detection Time-stretch Optical Microscopy (ATOM)

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오믹 접촉 제조 집중 이온 빔 기술 및 전기 특성 계층 반도체 나노 구조를 위해 사용

Article DOI: 10.3791/53200-v • 08:12 min • December 5th, 2015

December 5th, 2015 •

Ruei-San Chen¹, Chih-Che Tang², Wei-Chu Shen², Ying-Sheng Huang²

¹Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, ²Department of Electronic Engineering, National Taiwan University of Science and Technology

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공학 문제 (106) 집중 이온 빔 (FIB) 오믹 접촉 층 반도체 몰리브덴 diselenide (모스 이황화 몰리브덴 (MOS 전기 전도도 원자력 현미경 (AFM) 고분해능 투과형 전자 현미경 (HRTEM) 선택 영역 전자 회절 (SAED) 에너지 분산 형 X 선 분광법 (EDX)

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