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Ohmic Contato Fabrication usando uma técnica Focused-ion Beam e caracterização elétrica para camada semicondutora Nanoestruturas

Article DOI: 10.3791/53200-v • 08:12 min • December 5th, 2015
December 5th, 2015 •
1, 2, 2, 2
1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 2Department of Electronic Engineering, National Taiwan University of Science and Technology

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Engenharia Edição 106 feixe focalizado-ion (FIB) contato ôhmico camada semicondutora molibdênio disseleneto (Mose Dissulfeto de molibdênio (MoS Condutividade elétrica microscopia de força atômica (AFM) de alta resolução microscopia eletrônica de transmissão (HRTEM),-área selecionada difração de elétrons (SAED) espectroscopia de raios-X de energia dispersiva (EDX)
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