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Journal / Engineering / Uitgebreide karakterisatie van Extended Defecten…
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JoVE Journal Engineering
Uitgebreide karakterisatie van Extended Defecten in Semiconductor Materials door een Scanning Electron Microscope
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Uitgebreide karakterisatie van Extended Defecten in Semiconductor Materials door een Scanning Electron Microscope

Article DOI: 10.3791/53872-v • 11:14 min • May 28th, 2016
May 28th, 2016 •
1, 1, 1, 1, 2, 2, 1
1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden

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Techniek Scanning elektronenmicroscoop (SEM) silicium kathodeluminescentie (CL) elektronenbundel geïnduceerde stroom (EBIC) kruiscorrelatie elektron backscatter diffractie (ccEBSD) dislocaties korrelgrenzen D-lijn luminescentie
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