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November 07, 2016
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Dit manuscript beschrijft het buigproces van een organisch monokristallijn gebaseerde veldeffecttransistor een functionerende inrichting voor het meten van de eigenschappen elektronische handhaven. De resultaten suggereren dat veroorzaakt buiging in molecuulstructuur tussenruimte in het kristal en dus de lading hopdosering, wat belangrijk is in flexibele elektronica.
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Cite this Article
Ho, M., Tao, Y. Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors. J. Vis. Exp. (117), e54651, doi:10.3791/54651 (2016).
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