JoVE Journal
Engineering
Engineering
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Chapters
Summary
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分子束外延用来生长N极性InAlN阻高电子迁移率晶体管(HEMT器件)。在光滑,组成均匀InAlN层和HEMT的晶圆准备控制层生长条件和外延结构的结果与流动性高达1750厘米2 / V∙秒。