Engineering
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N极性InAlN阻高电子迁移率晶体管的等离子体辅助分子束外延
Summary November 24th, 2016
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分子束外延用来生长N极性InAlN阻高电子迁移率晶体管（HEMT器件）。在光滑，组成均匀InAlN层和HEMT的晶圆准备控制层生长条件和外延结构的结果与流动性高达1750厘米2 / V∙秒。
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