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Plasma-assisteret Molecular Beam Epitaxy af N-polar InAlN-barriere High-elektron-mobilitet Transistorer
 
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Plasma-assisteret Molecular Beam Epitaxy af N-polar InAlN-barriere High-elektron-mobilitet Transistorer

Article doi: 10.3791/54775
November 24th, 2016

Summary November 24th, 2016

Please note that all translations are automatically generated.

Click here for the English version.

Molekylær stråle epitaksi anvendes til at vokse N-polære InAlN-barriere høj elektron-mobilitet transistorer (HEMTs). Kontrol af wafer forberedelse, lag vækst betingelser og epitaksial struktur resulterer i glatte, deres sammensætning homogene InAlN lag og HEMTs med mobilitet så højt som 1.750 cm 2 / V ∙ sek.

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