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Plasma-assistert Molecular Beam Epitaxy av N-polar InAlN-barriere Høy elektron-mobilitet Transistorer
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Plasma-assistert Molecular Beam Epitaxy av N-polar InAlN-barriere Høy elektron-mobilitet Transistorer

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Molekylær bjelke epitaxy brukes til å dyrke N-polare InAlN-barriere høy elektron-mobilitet transistorer (HEMTs). Kontroll av wafer forberedelse, lag vekstvilkår og epitaxial struktur fører til glatte, sammensetnings homogene InAlN lag og HEMTs med mobilitet så høyt som 1750 cm 2 / V ∙ sek.

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Engineering molekylær stråle epitaxy Gan III-nitrider InAlN høy elektron-mobilitet transistorer halvledere vekst
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