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Plasma-assistita Molecular Beam Epitaxy di N-polare InAlN-barriera transistori ad alta mobilità di elettroni
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Plasma-assistita Molecular Beam Epitaxy di N-polare InAlN-barriera transistori ad alta mobilità di elettroni

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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epitassia a fascio molecolare viene utilizzato per far crescere i transistor InAlN barriere ad alta elettrone-mobilità N-polari (HEMT). Controllo della preparazione di wafer, condizioni di crescita di livello e di struttura epitassiale risultati in lisce, strati InAlN compositivo omogenei e HEMT con mobilità più in alto 1.750 centimetri 2 / V ∙ sec.

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Ingegneria Molecular epitassia a fascio Gan III-nitruri InAlN transistori ad alta elettrone-mobilità la crescita dei semiconduttori
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