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assistido por plasma Molecular Beam Epitaxy de N-polar InAlN barreiras Transistores de alta electron-mobility
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assistido por plasma Molecular Beam Epitaxy de N-polar InAlN barreiras Transistores de alta electron-mobility

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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epitaxia de feixe molecular é usado para crescer N-polares transistores InAlN barreiras high-elétron-de mobilidade (HEMTs). Controle da preparação wafer, condições de crescimento camada e estrutura epitaxial resulta em camadas, InAlN de composição homogênea suaves e HEMTs com mobilidade tão alto quanto 1.750 cm2 / V ∙ sec.

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Engenharia edição 117 Molecular epitaxia de feixe Gan III-nitretos InAlN transistores high-elétron-mobilidade o crescimento de semicondutores
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