JoVE Journal
Chemistry
Chemistry
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可変バンド ギャップ ピンホール フリー メチル鉛ハライド ペロブスカイト薄膜の低圧蒸気支援ソリューション プロセス
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Article
DOI:
10.3791/55404-v
•
08:12 min
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September 8th, 2017
可変バンド ギャップ ピンホール フリー メチル鉛ハライド ペロブスカイト薄膜の低圧蒸気支援ソリューション プロセス
September 8th, 2017
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Carolin M. Sutter-Fella*1,2,3, Yanbo Li*1,4, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally
Chapters
Summary
Please note that all translations are automatically generated.
Click here for the English version.
ここでは、提案は CH3NH3の合成のためのプロトコル CH3NH3Br 前駆体と、その後ピンホール フリー、連続 CH3NH PbI3 xBrx 3薄膜形成のため、高効率太陽電池と他のオプトエレクトロニクス デバイスのアプリケーション。