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Lavtryk damp-assisteret løsningsprocessen for afstemmelige Band Gap Pinhole-fri Methylammonium bly Halogenid Perovskite film
 

Lavtryk damp-assisteret løsningsprocessen for afstemmelige Band Gap Pinhole-fri Methylammonium bly Halogenid Perovskite film

Article doi: 10.3791/55404
September 8th, 2017

Summary September 8th, 2017

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Vi præsenterer her, en protokol til syntese af CH3NH3jeg og CH3NH3Br prækursorer og efterfølgende dannelse af pinhole-fri, vedvarende CH3NH3PbI3-xBrx tynde film for den anvendelse i høj effektivitet solceller og andre optoelektroniske enheder.

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