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Proceso de solución asistida por Vapor de baja presión para banda sintonizables hueco agujero de alfiler-libre Methylammonium plomo haluro perovskita películas
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Proceso de solución asistida por Vapor de baja presión para banda sintonizables hueco agujero de alfiler-libre Methylammonium plomo haluro perovskita películas

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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Aquí, presentamos un protocolo para la síntesis de CH3NH3I y precursores de Br CH3NH3y la posterior formación de agujero de alfiler-libre, continuadas CH3NH3PbIx 3Brx películas delgadas para el aplicación en células solares de alta eficiencia y otros dispositivos optoelectrónicos.

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Química número 127 plomo haluro perovskita proceso de solución asistida por Vapor de baja presión película delgada célula Solar Methylammonium haluro síntesis boquete de la venda ajustable
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