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Journal / Engineering / Single-Digit Nanometer Electron-Beam Lithography…
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Engineering

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JoVE Journal Engineering
Single-Digit Nanometer Electron-Beam Lithography met aberratie-gecorrigeerde scannen transmissie elektronenmicroscoop
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Single-Digit Nanometer Electron-Beam Lithography met aberratie-gecorrigeerde scannen transmissie elektronenmicroscoop

Article DOI: 10.3791/58272-v • 10:25 min • September 14th, 2018
September 14th, 2018 •
1, 1, 1, 1, 1, 1, 1
1Center for Functional Nanomaterials, Brookhaven National Laboratory

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We aberratie-gecorrigeerde scannen transmissie elektronenmicroscoop gebruiken om te definiëren van één cijfer nanometer patronen in twee veel gebruikte elektronenbundel weerstaat: poly-(methylmethacrylaat) en waterstof-silsesquioxane. Weerstaan patronen kunnen worden gerepliceerd in doel materialen keuze met één cijfer nanometer trouw met liftoff, plasma etsen, en infiltratie door organometallics weerstaan.

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Engineering kwestie 139 Nanofabrication elektronenstraal litho aberratie correctie elektronenmicroscopie nanomaterialen patroon overdracht e-bundel weerstaan poly-(methylmethacrylaat) waterstof silsesquioxane
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