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Journal / Engineering / 硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证…
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硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证
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硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证

Article DOI: 10.3791/58897-v • 06:57 min • July 17th, 2020
July 17th, 2020 •
1, 2, 1, 1,3
1Department of Materials Engineering, The University of Tokyo, 2Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 3Department of Materials Science and Engineering, Massachusetts Institute of Technology

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提出了降低硅上半圆柱空隙的锗外延层螺纹位错（TD）密度的理论计算和实验验证。给出了基于TD与表面相互作用的计算方法，通过像力、TD测量和透射电子显微镜对TD的观测。

Tags

工程，第161期，硅光子学，锗，锗，晶体生长，选择性外延生长，螺纹位错密度，像力，理论计算，化学气相沉积，CVD，透射电子显微镜，TEM
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