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JoVE Journal
Engineering

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Carrier levetid målinger i halvledere gennem metoden mikroovn Photoconductivity henfald
 
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Carrier levetid målinger i halvledere gennem metoden mikroovn Photoconductivity henfald

Article doi: 10.3791/59007
April 18th, 2019

Summary April 18th, 2019

Please note that all translations are automatically generated.

Click here for the English version.

Som en af de vigtige fysiske parametre i halvledere måles carrier levetid heri via en protokol, der anvender metoden mikroovn photoconductivity henfald.

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