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Plasmaunterstütztes MolekularstrahlepitaxieWachstum von Mg3N2 und Zn3N2 Dünnschichten
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Plasmaunterstütztes MolekularstrahlepitaxieWachstum von Mg3N2 und Zn3N2 Dünnschichten

Article DOI: 10.3791/59415-v • 13:05 min • May 11th, 2019
May 11th, 2019 •
1, 1
1Department of Electrical and Computer Engineering, University of Victoria

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Dieser Artikel beschreibt das Wachstum von epitaxialen Filmen von Mg3N2 und Zn3N2 auf MgO-Substraten durch plasmaunterstützte Molekularstrahlepitaxietaxiemit n2 Gas als Stickstoffquelle und optische Wachstumsüberwachung.

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Engineering Ausgabe 147 plasmaunterstützte Molekularstrahlepitaxie II3-V2 Halbleiter Zn3N2 Mg3N2 optische Wachstumsüberwachung Metallergusszellen
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