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JoVE Journal Engineering
Crescita Epitaxy del fascio molecolare assistita dal plasma di Mg3N2 en 3N2 Thin Films
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Crescita Epitaxy del fascio molecolare assistita dal plasma di Mg3N2 en 3N2 Thin Films

Article DOI: 10.3791/59415-v • 13:05 min • May 11th, 2019
May 11th, 2019 •
1, 1
1Department of Electrical and Computer Engineering, University of Victoria

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Questo articolo descrive la crescita delle pellicole epitassiali di Mg3N2 e n3N2 sui substrati MgO mediante epitassia molecolare assistita da plasma con gas N2 come fonte di azoto e monitoraggio della crescita ottica.

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Ingegneria Numero 147 epitassia molecolare assistita da plasma II3-V2 semiconduttori n3N2,Mg3N2 monitoraggio della crescita ottica cellule di effusione di metalli
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