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Engineering
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紫外発光ダイオード用ナノパターンサファイア基板上のAlNフィルムのグラフェン支援準ファンデルワールスエピタキシー
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Article
DOI:
10.3791/60167-v
•
07:00 min
•
June 25th, 2020
紫外発光ダイオード用ナノパターンサファイア基板上のAlNフィルムのグラフェン支援準ファンデルワールスエピタキシー
June 25th, 2020
•
Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally
Chapters
Summary
Please note that all translations are automatically generated.
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ナノパターンサファイア基板上の高品質AlNフィルムのグラフェン支援成長のためのプロトコルが提示される。