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Grafenassistert Quasi-van der Waals Epitaxy av AlN Film på Nano-mønstret Sapphire Substrat for ultrafiolett lys emitting dioder

Article DOI: 10.3791/60167-v • 07:00 min • June 25th, 2020
June 25th, 2020 •
*1,2, *3, 1,2, 1,2, 2,4, 1,2, 5, 1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally

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En protokoll for grafenassistert vekst av AlN-filmer av høy kvalitet på nanomønstret safirsubstrat presenteres.

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Engineering graphene MOCVD AlN ultrafiolett lysdioder van der Waals epitaxy nano-mønstret safir substrat
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