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Het effect van anodisatieparameters op de di-elektrische laag van aluminiumoxide van dunne-filmtransistors
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Het effect van anodisatieparameters op de di-elektrische laag van aluminiumoxide van dunne-filmtransistors

Article DOI: 10.3791/60798-v • 12:32 min • May 24th, 2020
May 24th, 2020 •
*1, *2, *1, *2, *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
* These authors contributed equally

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Anodisatie parameters voor de groei van de aluminiumoxide diëlektrische laag van zink-oxide dunne-film transistors (TAT's) zijn gevarieerd om de effecten op de elektrische parameter reacties te bepalen. Analyse van variantie (ANOVA) wordt toegepast op een Plackett-Burman ontwerp van experimenten (DOE) om de productieomstandigheden te bepalen die resulteren in geoptimaliseerde apparaatprestaties.

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Chemie Anodization aluminiumoxide diëlektrische laag dunne-film transistor zinkoxide ANOVA
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