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Effekten af annodisering parametre på aluminiumoxid dielektriske lag af tyndfilm transistorer
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Effekten af annodisering parametre på aluminiumoxid dielektriske lag af tyndfilm transistorer

Article DOI: 10.3791/60798-v • 12:32 min • May 24th, 2020
May 24th, 2020 •
*1, *2, *1, *2, *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
* These authors contributed equally

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Annodiseringsparametre for vækst af aluminiumoxiddielektrisk lag af zinkoxid tyndfilmstransistorer (TFTs) er varierede for at bestemme virkningerne på de elektriske parameterreaktioner. Analyse af varians (ANOVA) anvendes på en Plackett-Burman design af eksperimenter (DOE) for at bestemme de produktionsforhold, der resulterer i optimeret enhed ydeevne.

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Kemi Annodisering aluminiumoxid dielektrisk lag tyndfilmtransistor zinkoxid ANOVA
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