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Effekten av anodisering parametrar på aluminiumoxid dielektriska lagret av thin-film transistorer
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Effekten av anodisering parametrar på aluminiumoxid dielektriska lagret av thin-film transistorer

Article DOI: 10.3791/60798-v • 12:32 min • May 24th, 2020
May 24th, 2020 •
*1, *2, *1, *2, *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
* These authors contributed equally

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Anodisering parametrar för tillväxt av aluminium-oxid dielektriska skiktet av zink-oxid tunnfilm transistorer (TFTs) varieras för att bestämma effekterna på den elektriska parametern svar. Analys av varians (ANOVA) tillämpas på en Plackett-Burman-design av experiment (DOE) för att bestämma de tillverkningsförhållanden som resulterar i optimerad enhetsprestanda.

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Kemi utgåva 159 anodisering aluminiumoxid dielektriskt skikt tunnfilmstransistor zinkoxid ANOVA
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