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Nanofabrikation af gate-definerede GaAs / AlGaAs Lateral Quantum Dots

Article DOI: 10.3791/50581-v • 15:47 min • November 1st, 2013
November 1st, 2013 •
1, 1, 1
1Département de Physique, Faculté des Sciences, Université de Sherbrooke

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Denne artikel præsenterer en detaljeret fabrikation protokol for gate-definerede halvleder laterale kvante prikker på galliumarsenid heterostrukturer. Disse nanoskala enheder bruges til at fælde nogle elektroner til brug som kvante bits i kvanteinformation forarbejdning eller for andre mesoskopiske eksperimenter såsom kohærente konduktans målinger.

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Fysik nanostrukturer kvantepunkter nanoteknologi elektronik mikroelektronik faststoffysik Nanofabrikation nanoelektronik Spin qubit Lateral kvantepunkt
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