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Nanofabricage van Gate-gedefinieerde GaAs / AlGaAs Lateral Quantum Dots
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Nanofabricage van Gate-gedefinieerde GaAs / AlGaAs Lateral Quantum Dots

Article DOI: 10.3791/50581-v • 15:47 min • November 1st, 2013
November 1st, 2013 •
1, 1, 1
1Département de Physique, Faculté des Sciences, Université de Sherbrooke

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Dit document presenteert een gedetailleerde fabricage protocol voor gate-gedefinieerde halfgeleider laterale quantum dots op galliumarsenide heterostructuren. Deze nanoschaal apparaten worden gebruikt om enkele elektronen vangen voor gebruik als quantum bits in quantum information processing of voor andere mesoscopic experimenten zoals coherent geleidingsmetingen.

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Fysica nanostructuren Quantum Dots nanotechnologie elektronica micro-elektronica vaste stof fysica Nanofabrication nano-elektronica Spin qubit Laterale quantum dot
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