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Análisis de Contacto Interfaces para individuales GaN nanocables Dispositivos
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Análisis de Contacto Interfaces para individuales GaN nanocables Dispositivos

Article DOI: 10.3791/50738-v • 11:13 min • November 15th, 2013
November 15th, 2013 •
1, 1, 1
1Quantum Electronics and Photonics Division, National Institute of Standards and Technology

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Una técnica fue desarrollada que elimina películas Ni / Au contactos de metal de su sustrato para permitir la exploración y caracterización del contacto / sustrato y las interfaces de contacto / NW de dispositivos individuales de nanocables de GaN.

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Física nanodispositivos (electrónico) materiales semiconductores dispositivos semiconductores GaN los nanocables los contactos la morfología
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