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Electron Canalização Contraste de imagem para Rápido III-V heteroepitaxiais Caracterização

Article DOI: 10.3791/52745-v • 07:50 min • July 17th, 2015
July 17th, 2015 •
1, 2, 3, 3, 1,2
1Department of Materials Science and Engineering, The Ohio State University, 2Department of Electrical and Computer Engineering, The Ohio State University, 3Institute of Materials Research, The Ohio State University

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Engenharia Edição 101 Electron contraste canalização de imagem ECCI microscopia eletrônica estrutura-incompatibilidade luxações desajuste semicondutores heteroestruturas caracterização rápida
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