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Resistiv Kontakta Fabrication Med hjälp av en fokuserad-ion Beam Teknik och elektrisk karakterisering för Layer Semiconductor nanostrukturer
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Resistiv Kontakta Fabrication Med hjälp av en fokuserad-ion Beam Teknik och elektrisk karakterisering för Layer Semiconductor nanostrukturer

Article DOI: 10.3791/53200-v • 08:12 min • December 5th, 2015
December 5th, 2015 •
1, 2, 2, 2
1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 2Department of Electronic Engineering, National Taiwan University of Science and Technology

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Engineering fokuserad-jonstrålar (FIB) ohmsk kontakt lager halvledare molybden diselenid (MOSE Molybdendisulfid (MoS Elektrisk ledningsförmåga atomkraftsmikroskopi (AFM) högupplösande transmissionselektronmikroskop (HRTEM) valt området elektron diffraktometri (SAED) energiröntgenspektroskopi (EDX)
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