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Journal / Engineering / 通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征…
JoVE Journal
Engineering

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JoVE Journal Engineering
通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征

Article DOI: 10.3791/53872-v • 11:14 min • May 28th, 2016
May 28th, 2016 •
1, 1, 1, 1, 2, 2, 1
1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden

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工程，第111，扫描电子显微镜（SEM），硅，阴极发光（CL），电子束感生电流（EBIC），互相关电子背散射衍射（ccEBSD），位错，晶界，D线的发光
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