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Plasmagestützte Molecular Beam Epitaxy von N-polar InAlN-Barriere Hochelektronenmobilität Transistoren
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Plasmagestützte Molecular Beam Epitaxy von N-polar InAlN-Barriere Hochelektronenmobilität Transistoren

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Molekularstrahlepitaxie verwendet wird N-polar InAlN-Barriere High-Elektronen-mobility transistors (HEMT) zu wachsen. Die Steuerung der Waferaufbereitung, Schichtwachstumsbedingungen und Epitaxie - Struktur ergibt glatte, homogene kompositorisch InAlN Schichten und HEMTs mit Mobilität so hoch wie 1750 cm 2 / V ∙ sec.

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Technik Heft 117 Molekularstrahlepitaxie GaN III-Nitride InAlN High-Elektronen-mobility transistors Halbleiter-Wachstum
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