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Asistida por plasma Molecular Beam epitaxia de N-polar InAlN de barrera de transistores de alta movilidad de electrones
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Asistida por plasma Molecular Beam epitaxia de N-polar InAlN de barrera de transistores de alta movilidad de electrones

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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epitaxia de haces moleculares se utiliza para producir transistores InAlN barreras de alta movilidad de electrones-N-polares (HEMT). De control de la preparación de la oblea, condiciones de crecimiento y estructura de capa epitaxial resultados en capas InAlN lisas, de composición homogénea y HEMTs con movilidad tan alto como 1.750 cm2 / V ∙ seg.

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Ingeniería No. 117 epitaxia de haces moleculares Gan III-nitruros InAlN transistores de alta movilidad de electrones el crecimiento de semiconductores
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