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JoVE Journal Chemistry
Processus de Solution assistée par vapeur basse pression pour bande accordable Gap sténopé méthylammonium plomb halogénure Perovskite Films
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Processus de Solution assistée par vapeur basse pression pour bande accordable Gap sténopé méthylammonium plomb halogénure Perovskite Films

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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Nous présentons ici un protocole pour la synthèse de CH3NH3I et précurseurs de Br3CH3NH et la formation subséquente de continu, pinhole-free CH3NH3IBP3-xBrx minces pour la application dans les cellules solaires à haut rendement et autres dispositifs optoélectroniques.

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Chimie question 127 plomb halogénure pérovskite processus de Solution d’assistée par vapeur basse pression minces cellule solaire halogénure méthylammonium synthèse accordable bande interdite
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