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Ett siffer Nanometer elektronstråle Litografi med et avvik-korrigert skanning Transmission elektron mikroskop
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Ett siffer Nanometer elektronstråle Litografi med et avvik-korrigert skanning Transmission elektron mikroskop

Article DOI: 10.3791/58272-v • 10:25 min • September 14th, 2018
September 14th, 2018 •
1, 1, 1, 1, 1, 1, 1
1Center for Functional Nanomaterials, Brookhaven National Laboratory

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Vi bruker et avvik-korrigert skanning transmission elektronmikroskop definere ett siffer nanometer mønstre i to brukte elektronstråle motstår: poly (methyl methacrylate) og hydrogen silsesquioxane. Motstå mønstre kan replikeres i målet materialet til valg med enkelt siffer nanometer gjengivelse bruker oppskytning, plasma etsing, og motstå infiltrasjon av organometallics.

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Engineering problemet 139 Nanofabrication elektronstråle litografi aberrasjon korreksjon elektronmikroskop nanomaterialer mønster overføring e-beam motstå poly (methyl methacrylate) hydrogen silsesquioxane
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