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Crecimiento de la epitasa de haz molecular asistido por plasma de Mg3N2 y Zn3N2 Thin Films
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Crecimiento de la epitasa de haz molecular asistido por plasma de Mg3N2 y Zn3N2 Thin Films

Article DOI: 10.3791/59415-v • 13:05 min • May 11th, 2019
May 11th, 2019 •
1, 1
1Department of Electrical and Computer Engineering, University of Victoria

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Este artículo describe el crecimiento de películas epitaxiales de Mg3N2 y Zn3N2 en sustratos de MgO por epitaxiía de haz molecular asistida por plasma con gas N2 como fuente de nitrógeno y monitoreo óptico del crecimiento.

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Ingeniería Número 147 epitasa de haz molecular asistida por plasma II3-V2 semiconductores Zn3N2 Mg3N2 monitoreo de crecimiento óptico células de derrame de metal
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