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Epitassia quasi-van der Waals di AlN, assistita dal grafene sul substrato di zaffiro nano-modello per diodi ultravioletti che emettono luce
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Epitassia quasi-van der Waals di AlN, assistita dal grafene sul substrato di zaffiro nano-modello per diodi ultravioletti che emettono luce

Article DOI: 10.3791/60167-v • 07:00 min • June 25th, 2020
June 25th, 2020 •
*1,2, *3, 1,2, 1,2, 2,4, 1,2, 5, 1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally

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Viene presentato un protocollo per la crescita assistita dal grafene di pellicole AlN di alta qualità su substrato di zaffiro nanomodellato.

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Ingegneria Numero 160 grafene MOCVD AlN diodi di emissione di luce ultravioletta epitaxy van der Waals substrato di zaffiro nanomodellato
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