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JoVE Journal Engineering
Quasi-van der Waals Estributivo assistido por grafeno de Filme aln em substrato de safira nano-padronizado para diodos emissores de luz ultravioleta
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Quasi-van der Waals Estributivo assistido por grafeno de Filme aln em substrato de safira nano-padronizado para diodos emissores de luz ultravioleta

Article DOI: 10.3791/60167-v • 07:00 min • June 25th, 2020
June 25th, 2020 •
*1,2, *3, 1,2, 1,2, 2,4, 1,2, 5, 1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally

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Um protocolo para o crescimento assistido por grafeno de filmes de AlN de alta qualidade em substrato de safira nano-padronizado é apresentado.

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Engenharia Edição 160 grafeno MOCVD AlN diodos emissores de luz ultravioleta epitaxia van der Waals substrato de safira nano-padronizado
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