Name: fermi level in semiconductors
Uploaded: 2024-07-08T13:20:09.000Z
Duration: 1 min 18 s
Channel: JoVE

시그모이드 곡선으로 표시되는 Fermi-Dirac 함수는 주어진 온도에서 에너지 상태가 전자에 의해 점유될 확률을 나타냅니다.
페르미 준위는 50%의 점유 확률로 에너지 상태를 나타내며 원자가대와 전도대 사이에 있습니다.
절대 영도에서는 페르미 수준까지의 에너지 상태가 채워지고 그 이상의 에너지 상태는 비어 있습니다. 더 높은 온도에서는 페르미 수준보다 높은 상태가 채워질 수 있습니다.
진성 반도체에서 정공과 전자의 농도가 동일하다는 것은 페르미 준위가 밴드 갭의 중간에 있음을 의미합니다.
n형 반도체에서 더 높은 전자 농도는 페르미 수준을 전도대에 가깝게 이동시킵니다.
p형 반도체에서 페르미 준위는 더 높은 구멍 농도로 인해 원자가 대역 근처에 있습니다.
온도가 상승함에 따라 더 많은 전자가 원자가에서 전도대로 전이되어 페르미 준위가 전도대에 더 가깝게 이동합니다.
페르미 수준이 다른 물질이 연결되면 전자가 높은 페르미 수준에서 낮은 수준으로 흐르면서 접합부에서 페르미 수준을 정렬하여 평형을 확립합니다.

페르미 레벨

페르미-디랙 함수는 주어진 온도에서 에너지 상태가 전자에 의해 점유될 확률을 나타내는 S자형 곡선으로 표시됩니다. 페르미 준위는 전자를 찾을 확률이 50%인 에너지 준위로 낮은 에너지 가전자대와 높은 에너지 전도대 사이에 위치합니다.

절대 영도에서 전자는 페르미 준위까지 모든 에너지 상태를 채우고 상위 상태는 비워 둡니다. 온도가 상승함에 따라 전자의 에너지가 증가하고 페르미 준위 이상의 빈 상태를 차지할 수 있게 됩니다.

전자와 정공의 농도가 동일한 진성 반도체에서는 페르미 준위가 띠틈의 중간에 위치합니다. 이는 n형 또는 p형 반도체를 생성하기 위해 불순물을 추가하면 변경됩니다. n형 반도체에서는 전자가 과잉되면 페르미 준위가 전도대로 이동합니다. 반대로 정공 농도가 높은 p형 반도체에서는 페르미 준위가 가전자대에 더 가까워집니다.

온도가 상승하면 더 많은 수의 전자가 가전자대에서 전도대로 도약하고, 그 과정에서 페르미 준위가 전도대로 이동하게 됩니다. 이러한 변화는 반도체의 전도도에 영향을 미칩니다.

페르미 준위가 서로 다른 물질이 접촉하면 전자는 페르미 준위가 높은 곳에서 낮은 곳으로 흐릅니다. 전자의 움직임은 접합부에서 페르미 준위를 정렬하여 평형을 형성합니다. 이 개념은 수많은 전자 부품의 작동에 중요한 역할을 하며 전기 전도성과 전자 장치의 성능을 조절하고 조정할 수 있습니다.

시그모이드 곡선으로 표시되는 Fermi-Dirac 함수는 주어진 에너지 상태에서 전자가 차지할 확률을 나타냅니다.

Education

교육

JoVE Core

Electrical Engineering

전기공학

Unit 1

제1단원

Basics of Semiconductors

반도체의 기초

KEY TERMS AND CONCEPTS

주요 용어 및 개념

Fermi Level

fermi level in semiconductors

The Fermi level is a key energy level in semiconductors. It sits between the lower-energy valence band and the higher-energy conduction band. The Fermi-Dirac function, which follows an S-shaped curve, shows the chance that an energy state is filled by an electron at a given temperature.

At absolute zero, electrons occupy every energy state up to the Fermi level. States above it stay empty. As temperature rises, electrons gain energy and can move into vacant states above the Fermi level.

In an intrinsic semiconductor, the number of electrons equals the number of holes. A hole is the missing electron state left in the valence band. In this case, the Fermi level lies near the middle of the band gap. Adding impurities changes this balance and creates n-type or p-type semiconductors.

In an n-type semiconductor, extra electrons shift the Fermi level closer to the conduction band. In a p-type semiconductor, a higher number of holes moves the Fermi level closer to the valence band. Higher temperature also lets more electrons jump from the valence band to the conduction band, which nudges the Fermi level toward the conduction band and changes conductivity.

When materials with different Fermi levels touch, electrons flow from the region with the higher Fermi level to the region with the lower one. This movement continues until the Fermi levels align at the junction. The resulting equilibrium is important for many electronic components because it helps control electrical conductivity and device performance.

Fermi Level in Semiconductors

energy bands in solids

Valence and Conduction Bands in Silicon

Valence and conduction bands explain how electrons behave in solids. In isolated atoms, electrons occupy discrete energy levels that the Bohr model describes well. The hydrogen atom, for example, has specific electron energies labeled by the quantum number n, and higher n values give levels that are less negative and closer together. When atoms move close together in a solid, those discrete levels start to split. This happens because electron orbitals from neighboring atoms overlap. The Pauli...

semiconductors

Energy Bands in Metals and Insulators

Materials conduct electricity in different ways because their energy bands are arranged differently. Metals, semiconductors, and insulators can be compared with energy band diagrams. These diagrams show how easily electrons can move when an electric field is applied. Metals such as copper, zinc, and lead have low resistivity. Their conduction band is not fully occupied, or it overlaps with the valence band, so a band gap is essentially absent. Electrons in the highest valence energy levels can...

types of semiconductors

Intrinsic and Doped Semiconductors

Intrinsic semiconductors are very pure materials with no impurities. At absolute zero, they act as perfect insulators because the valence electrons are bound and the conduction band is empty. That means electrical conduction cannot occur under those conditions. The Fermi level helps describe the chance that an energy level is occupied by an electron at thermal equilibrium. In an intrinsic semiconductor, the Fermi level sits near the middle of the band gap at absolute zero. As temperature...

carrier generation and recombination

Semiconductor Charge Carriers: Creation and Loss

Carrier generation and recombination control how free charge carriers change inside a semiconductor. Carrier generation creates electron-hole pairs, or EHPs, when electrons move from the valence band into the conduction band and leave holes behind. Carrier recombination does the opposite and lowers the number of free carriers. In direct-bandgap semiconductors such as gallium arsenide, generation happens efficiently because energy absorption can move a valence electron straight to the...

carrier transport

Drift and Diffusion in Semiconductors

Drift and diffusion are the two main ways electric current forms in semiconductors. These charge-carrier motions help determine how semiconductor devices work and how well they perform. The carriers involved are electrons and holes. Drift current begins when an external electric field acts on charge carriers. Electrons and holes move between collisions with lattice atoms, and this motion creates drift velocity. For electrons, drift velocity depends on electron mobility and the electric field...

p-n junction

P-N Junction Depletion Region

A p-n junction forms when p-type and n-type semiconductor materials are joined together. At the boundary, holes from the p-side and electrons from the n-side diffuse into the opposite side because of the concentration gradient. This movement leaves a region with no free charge carriers near the junction, called the depletion region. The charge density in the depletion region can be described on the n-side and p-side using the donor and acceptor doping concentrations, ND and NA. The fixed...

biasing of p-n junction

P-N Junction Diode Under Bias

P-N junction diodes change behavior under equilibrium, forward bias, and reverse bias. In equilibrium, no external voltage is applied across the junction. Carriers diffuse at the boundary and leave behind charged dopants. Acceptors remain on the p-side, and donors remain on the n-side. These fixed charges form a depletion region and an electric field that blocks further diffusion. The band diagram at equilibrium shows the Fermi levels on both sides aligned. That alignment means the junction is...

metal-semiconductor junctions

Schottky and Ohmic Metal Contacts

Metal contacts with semiconductors can form either Schottky or Ohmic junctions. The result depends on the work function of the metal, the work function of the semiconductor, and how electrons move when the two materials touch. At equilibrium, the Fermi levels align, so charge shifts until both sides match in energy. Schottky barriers form when a metal with work function Φm contacts a semiconductor with a different work function Φs. If Φm is greater than Φs, the semiconductor Fermi level starts...

biasing of metal-semiconductor junctions

How Bias Changes Metal-Semiconductor Current

Biasing metal-semiconductor junctions means applying a voltage across the junction. The metal connects to the voltage source, and the semiconductor is grounded. This setup helps control the direction and size of current in devices such as diodes, transistors, and photovoltaic cells. In a Schottky junction with an n-type semiconductor, a positive voltage on the metal lowers its Fermi level. A Fermi level is the energy level that helps describe how electrons are distributed. Lowering this level...

fermi level

The Fermi level is a key energy level in semiconductors. It sits between the lower-energy valence band and the higher-energy conduction band. The Fermi-Dirac function, which follows an S-shaped curve, shows the chance that an energy state is filled by an electron at a given temperature. At absolute zero, electrons occupy every energy state up to the Fermi level. States above it stay empty. As temperature rises, electrons gain energy and can move into vacant states above the Fermi level. In an...

fermi level dynamics

Vacuum Level and Schottky Barriers

Vacuum level and Schottky barriers help explain how electrons move between materials. The vacuum level is the energy needed for an electron to escape a material surface. In a semiconductor, it usually sits above the conduction band and serves as a reference for comparing electron energy. Electron affinity is the energy gap between the conduction band minimum and the vacuum level. It shows how easily a semiconductor can accept extra electrons. The work function is the least energy needed to...

key terms and concepts

Learn how the Fermi level changes with temperature, doping, and semiconductor type, and how it affects electron flow, equilibrium, and conductivity.

Fermi Level in Semiconductors | JoVE K12

JoVE Core Electrical Engineering offers easy-to-understand animated videos that cover fundamental concepts of electric circuits along with circuit analysis techniques. It incorporates first-order and second-order circuits using operational amplifiers and circuit transformation concepts. The inclusion of practical design examples and real-world applications through scientist-in-action videos adds significant educational value, making complex concepts accessible.

electrical engineering

Fermi Level in Semiconductors

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