Daegu Gyeongbuk Institute of Science and Technology 3 articles published in JoVE Chemistry Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers Jae Taek Oh1,2, Dae-Hwan Kim1, Younghoon Kim1 1Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 2Department of Chemistry and Research Institute for Convergence of Basic Sciences, Hanyang University Herein, we present detailed protocols for solution-processed silver-bismuth-iodine (Ag-Bi-I) ternary semiconductor thin films fabricated on TiO2-coated transparent electrodes and their potential application as air-stable and lead-free optoelectronic devices. Chemistry Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing Yong Chan Choi1, Sangl Il Seok2, Eunjeong Hwang1, Dae-Hwan Kim1 1Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 2Perovtronics Research Center, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) This work provides a detailed experimental procedure for the deposition of Sb2S3 on a mesoporous TiO2 layer using a SbCl3-thiourea complex solution for applications in Sb2S3-sensitized solar cells. This article also determines key factors governing the deposition process. Engineering Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition Young Jin Yoo1, Gil Ju Lee1, Kyung-In Jang2, Young Min Song1 1School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 2Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.
