fabrication-of-spatially-confined-complex-oxides

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Oak Ridge National Laboratory

University of Tennessee, Knoxville

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to âˆ¼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

Giant magnetoresistance in organic spin valves.

Diffusion interfaciale entre &eacute;lectrodes magn&eacute;tiques et les couches organiques entretoise est un probl&egrave;me s&eacute;rieux dans la spintronique organique qui complique tente de comprendre le m&eacute;canisme de transport d&eacute;pendant du spin et nuit &agrave; la r&eacute;alisation d&#39;une magn&eacute;tor&eacute;sistance pr&eacute;f&eacute;rence &eacute;lev&eacute; (MR). Nous d&eacute;posons nanodots au lieu d&#39;atomes sur la couche organique &agrave; l&#39;aide de croissance d&#39;assist une couche tampon. Tourner les valves &agrave; l&#39;aide de cette exposition de la m&eacute;thode une interface plus nette et une MR g&eacute;ante de &sim;300 %. Analyse des caract&eacute;ristiques courant-tension indique que l&#39;injection de porteur de retomb&eacute;es d&eacute;pendent est corr&eacute;l&eacute;e avec le MR observ&eacute;.

Magn&eacute;tor&eacute;sistance g&eacute;ante dans les vannes de spin organiques.

Interfacciale diffusione tra gli elettrodi magnetici e strati organici distanziale &egrave; un grave problema per la spintronica organica che complica i tentativi di capire il meccanismo di rotazione dipendente dal trasporto e fa male il raggiungimento di un alto commentati magnetoresistenza (MR). Abbiamo deposito nanodots invece di atomi su strato organico mediante crescita assist di buffer layer. Spin valvole utilizzando questa Metodo Mostra un&#39;interfaccia pi&ugrave; nitida e un signor gigante di fino a &sim;300%. Analisi delle caratteristiche corrente-tensione indicano che l&#39;iniezione del vettore di spin-dipendente correla con il signor osservati.

Hangwen Guo

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