Contact Hole Patterning
Contact Hole Patterning - Related Videos
07:47
Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Cited by 1 •
2017
Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.
01:10
Detection of Black Holes
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2023
Although black holes were theoretically postulated in the 1920s, they remained outside the domain of observational astronomy until the 1970s. Their closest cousins are neutron stars, which are composed almost entirely of neutrons packed against each other, making them extremely dense. A neutron star has the same mass as the Sun but its diameter is only a few kilometers. Therefore, the escape velocity from their surface is close to the speed of light. Not until the 1960s, when the first neutron...
01:13
Contact Angle
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2023
When a solid is dipped inside a liquid, the liquid surface becomes curved near the contact. For some solid–liquid interfaces, the liquid is pulled up along the solid, while for others, the liquid surface is convex or depressed near the solid surface. This phenomenon can be explained using the concept of cohesive and adhesive forces. The adhesive force is the molecular force between molecules of different materials, that is, between the molecules of the solid and the liquid. The cohesive force...
08:25
Contact Hypersensitivity as a Murine Model of Allergic Contact Dermatitis
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Cited by 2 •
2022
Contact hypersensitivity (CHS) is a murine experimental model of allergic contact dermatitis (ACD). CHS is based on sensitization with reactive hapten by painting the shaved skin of the chest and abdomen, with a subsequent ear skin challenge with a diluted hapten, causing a swelling reaction that is assessed in various ways.
07:52
In Vitro Reconstitution of Spatial Cell Contact Patterns with Isolated Caenorhabditis elegans Embryo Blastomeres and Adhesive Polystyrene Beads
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Cited by 8 •
2019
Tissue complexities of multicellular systems confound the identification of causal relationship between extracellular cues and individual cellular behaviors. Here, we present a method to study the direct link between contact-dependent cues and division axes using C. elegans embryo blastomeres and adhesive polystyrene beads.
FAQs
Critical dimensions determine the size and placement accuracy of each opening relative to the intended circuit layout. If a hole is undersized, the later metal connection may have insufficient access; if it is oversized, surrounding insulating material may be compromised. Controlling these dimensions therefore affects contact resistance, electrical reliability, and manufacturing yield as device geometries become smaller.
Etch selectivity describes how effectively the exposed dielectric is removed while the surrounding photoresist and material are preserved. Adequate selectivity helps confine the opening to its intended location and prevents unwanted loss of neighboring regions. Poor selectivity can distort the hole or damage surrounding layers, making electrical connections less consistent across the wafer.
Alignment places each opening over the correct underlying device region or wiring feature, while profile control governs the hole's shape through the insulating layer. Both are essential because a misplaced or poorly shaped opening can obstruct the later metal connection or increase variability. Their importance grows as dense circuits reduce the available space between neighboring structures.
A typical sequence coats the wafer with photoresist, exposes the resist to transfer the circuit pattern, and develops it to reveal selected regions. An etching step then removes the exposed dielectric and forms the openings, while the surrounding material remains protected. Process results are evaluated through dimensions, alignment, etch behavior, and the resulting hole profile.
Photoresist temporarily defines which parts of the insulating layer are exposed to the etch. Photolithographic exposure and development create the resist pattern, and the remaining resist protects surrounding dielectric during removal of the selected regions. This division of roles allows the circuit layout to be transferred into the dielectric while limiting unintended material loss.
The process supports electrical connections among transistors, wiring layers, and other functional structures in dense integrated circuits. Its engineering value extends beyond forming individual openings: controlled dimensions, alignment, selectivity, and profiles help determine contact resistance, reliability, and yield. These requirements make the technique especially relevant as shrinking geometries demand more accurate connections in limited wafer area.