Lagedruk Vapor-bijgewoonde oplossingsproces voor afstembare Band Gap Pinhole-vrije Methylammonium lood halogenide perovskiet Films

9.2K weergaven

Geciteerd door 2

08:12 min.

8 september 2017

10.3791/55404-v

8 september 2017

9.2K weergaven

Carolin M. Sutter-Fella^*¹^,²^,³ , Yanbo Li^*¹^,⁴ , Nicola Cefarin¹^,⁵^,⁶ , Aya Buckley¹^,⁷ , Quynh Phuong Ngo⁸^,⁹ , Ali Javey²^,³ , Ian D. Sharp¹ , Francesca M. Toma¹

¹Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, ²Electrical Engineering and Computer Sciences, University of California, Berkeley, ³Materials Science Division, Lawrence Berkeley National Laboratory, ⁴Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, ⁵Department of Physics, Graduate School of Nanotechnology, University of Trieste, ⁶TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, ⁷Department of Chemistry, University of California, Berkeley, ⁸Materials Science and Engineering, University of California, Berkeley, ⁹Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory

^* These authors contributed equally

Hier presenteren we een protocol voor de synthese van₃₃NH CH I en CH₃NH₃Br precursoren en de daaropvolgende vorming van pinhole-vrije, continue CH₃NH₃PbI_3-xBr_x dunne lagen voor de toepassing in hoge efficiëntie zonnecellen en andere opto-elektronische apparaten.