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Journal / Chemistry / स्वरित्र बैंड गैप Pinhole-फ्री Methylammonium लीड …
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स्वरित्र बैंड गैप Pinhole-फ्री Methylammonium लीड Halide Perovskite फिल्मों के लिए कम दबाव वाष्प-सहायता समाधान प्रक्रिया
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स्वरित्र बैंड गैप Pinhole-फ्री Methylammonium लीड Halide Perovskite फिल्मों के लिए कम दबाव वाष्प-सहायता समाधान प्रक्रिया

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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यहां, हम ch3nh3मैं और ch3एनएच3बीआर पुरोगामी और pinhole के बाद के गठन के संश्लेषण के लिए एक प्रोटोकॉल मौजूद-free, निरंतर CH3NH3PbI3-xBrx पतली फिल्मों के लिए उच्च दक्षता सौर कोशिकाओं और अन्य optoelectronic उपकरणों में आवेदन ।

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रसायन विज्ञान अंक १२७ सीसा Halide Perovskite कम दबाव वाष्प-सहायतापूर्ण समाधान प्रक्रिया पतली फिल्म सौर सेल Methylammonium Halide संश्लेषण स्वरित्र बैंड गैप
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